The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories.
Non-volatile memories such as NAND Flash, EEPROM, etc. have individually erasable segments, each of which can be put through a limited number of program/erase or write cycles. For example, the device can only endure a limited number of writes, after which the device becomes unreliable. In order to wear out the cells in a uniform manner, non-volatile memory and storage products based on the above-mentioned technologies implement a technique called wear leveling. Once a set threshold is reached, wear leveling maps writes of a logical block to a different physical block. This prevents a single physical block from prematurely failing due to a high concentration of writes. If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.
Threat Mapped score: 0.0
Industry: Finiancial
Threat priority: Unclassified
N/A
| Phase | Note |
|---|---|
| Architecture and Design | N/A |
| Implementation | N/A |
Intro: An attacker can render a memory line unusable by repeatedly causing a write to the memory line.
Body: Below is example code from [REF-1058] that the user can execute repeatedly to cause line failure. W is the maximum associativity of any cache in the system; S is the size of the largest cache in the system.
// Do aligned alloc of (W+1) arrays each of size S while(1) { for (ii = 0; ii < W + 1; ii++) array[ii].element[0]++; }